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  STX112 silicon npn power darlington transistor n monolithic darlington configuration n integrated antiparallel collector-emitter diode applications n linear and switching industrial equipment description the device is a silicon epitaxial-base npn transistor in monolithic darlington configuration mounted in to-92 plas tic package. it is intented for use in linear and switching applications. ordering codes: STX112 (shipment in bulk) STX112-ap (shipment in ammopack) internal schematic diagram r 1 typ.= 7k w r 2 typ.= 230 october 2000 to-92 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 100 v v ceo collector-emitter voltage (i b = 0) 100 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 2 a i cm collector peak current 4 a i b base current 50 ma p tot total dissipation at t amb = 25 o c 1.2 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ? 1/5
thermal data r thj-amb thermal resistance junction-ambient max 104 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ceo collector cut-off current (i b = 0) v ce = 50 v 2 ma i cbo collector cut-off current (i e = 0) v cb = 100 v 1 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 2 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 30 ma 100 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 8 ma 2.5 v v be * base-emitter voltage i c = 2 a v ce = 4 v 2.8 v h fe * dc current gain i c = 1 a v ce = 4 v i c = 2 a v ce = 4 v 1000 500 * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area derating curve STX112 2/5
dc current gain base-emitter saturation voltage freewheel diode forward voltage collector-emitter saturation voltage base-emitter on voltage STX112 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.58 5.33 0.180 0.210 b 4.45 5.2 0.175 0.204 c 3.2 4.2 0.126 0.165 d 12.7 0.500 e1.27 0.050 f 0.4 0.51 0.016 0.020 g0.35 0.14 to-92 mechanical data STX112 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com STX112 5/5


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